Understanding Schottky barriers formation

"Origin of weak Fermi level pinning at the graphene/silicon interface" par J. Courtin, S. Tricot, G. Delhaye, Pascal Turban, B. Lépine, J. Le Breton et Philippe Schieffer

  • There is a strong interest in Graphene/silicon junctions for possible applications in photovoltaics or sensors but the formation mechanism governing the Schottky barrier formation is unclear. Here, we succeeded in controlling the Schottky barrier height by modifying the graphene work function. DFT calculations reveal that the absence of pining is due to the low interface state density induced in the Si bandgap by the 2D nature of graphene. This study allow a better understanding of Schottky barriers formation in Van der Waals heterostructures.

  • This work has been published in Physical Review B (Physical Review B, 2020, 102 (24), pp.245301. DOI : 10.1103/PhysRevB.102.245301) : : link to HAL .